Cita APA (7a ed.)
Hemalatha, R. G., Kumar, M. A., Mishra, G. S., N, M., Ismail, K. B. M., Mahalingam, S., & Kim, J. (2025). Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications. Biomedical Microdevices, 27(2), 1-19.
Cita Chicago Style (17a ed.)
Hemalatha, Reddy Govindappagari, Manoharan Arun Kumar, Girish Shankar Mishra, MohanKumar N, Kamal Batcha Mohamed Ismail, Shanmugam Mahalingam, y Junghwan Kim. "Design and Simulation of Advanced Boron-doped GaN Cap Layer on AlGaN/GaN MOSHEMTs for Enhanced Label-free Biosensing Applications." Biomedical Microdevices 27, no. 2 (2025): 1-19.
Cita MLA (9a ed.)
Hemalatha, Reddy Govindappagari, et al. "Design and Simulation of Advanced Boron-doped GaN Cap Layer on AlGaN/GaN MOSHEMTs for Enhanced Label-free Biosensing Applications." Biomedical Microdevices, vol. 27, no. 2, 2025, pp. 1-19.
Precaución: Estas citas no son 100% exactas.