Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance.

In this study, a series of GeMnTe (x = 0-0.21) compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into GeTe on the structure and thermoelectric properties of GeMnTe is profound. With increasing content of MnTe, the...

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Publicado en:Journal of the American Chemical Society Vol. 140; no. 7; pp. 2673 - 2687
Autores principales: Zheng Zheng, Rigui Deng, Hongyao Xie, Wei Liu, Yonggao Yan, Xinfeng Tang, Xianli Su, Stoumpos, Constantinos, Kanatzidis, Mercouri G., Shiqiang Hao, Wolverton, Chris, Uher, Ctirad
Formato: Artículo
Publicado: American Chemical Society 2/21/2018
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Acceso en línea:Ver este registro en EBSCOhost
fields @attributes:
  recordID: 1
pdfLink:
plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=128201148&site=ehost-live
header:
  @attributes:
    shortDbName: hlh
    uiTerm: 128201148
    longDbName: Humanities International Complete
    uiTag: AN
  controlInfo:
    bkinfo:
    jinfo:
      jid:
        00027863
        ACS
      jtl: Journal of the American Chemical Society
      issn: 00027863
      maglogo: N
    pubinfo:
      dt: 2/21/2018
      vid: 140
      iid: 7
      pid: 997
      pub: American Chemical Society
    artinfo:
      ui:
        128201148
        10.1021/jacs.7b13611
      ppf: 2673
      ppct: 14
      formats:
      tig:
        atl: Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance.
      aug:
        au:
          Zheng Zheng
          Rigui Deng
          Hongyao Xie
          Wei Liu
          Yonggao Yan
          Xinfeng Tang
          Xianli Su
          Stoumpos, Constantinos
          Kanatzidis, Mercouri G.
          Shiqiang Hao
          Wolverton, Chris
          Uher, Ctirad
        affil:
          State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
          Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
          Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
          Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
      su:
        Thermal conductivity
        Thermoelectric materials
        Annealing of metals
        Density functional theory
        Hematite
      sug:
        subj:
          Thermal conductivity
          Thermoelectric materials
          Annealing of metals
          Density functional theory
          Hematite
      ab: In this study, a series of GeMnTe (x = 0-0.21) compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into GeTe on the structure and thermoelectric properties of GeMnTe is profound. With increasing content of MnTe, the structure of the GeMnTe compounds gradually changes from rhombohedral to cubic, and the known R3m to Fm-3m phase transition temperature of GeTe moves from 700 K closer to room temperature. First-principles density functional theory calculations show that alloying MnTe into GeTe decreases the energy difference between the light and heavy valence bands in both the R3m and Fm-3m structures, enhancing a multiband character of the valence band edge that increases the hole carrier effective mass. The effect of this band convergence is a significant enhancement in the carrier effective mass from 1.44 m (GeTe) to 6.15 m (GeMnTe). In addition, alloying with MnTe decreases the phonon relaxation time by enhancing alloy scattering, reduces the phonon velocity, and increases Ge vacancies all of which result in an ultralow lattice thermal conductivity of 0.13 W m K at 823 K. Subsequent doping of the GeMnTe compositions with Sb lowers the typical very high hole carrier concentration and brings it closer to its optimal value enhancing the power factor, which combined with the ultralow thermal conductivity yields a maximum ZT value of 1.61 at 823 K (for GeMnSbTe). The average ZT value of the compound over the temperature range 400-800 K is 1.09, making it the best GeTe-based thermoelectric material.
      pubtype: Academic Journal
      doctype: Article
      src: R
    language: English
    refInfo:
    copyright:
      @attributes:
        flag: Y
      dt:
        @attributes:
          year: 2018
    holdings:
      @attributes:
        islocal: N