Electronic and magnetic properties of Fe-doped GaN: first-principle calculations.
We have systematically studied the effect of Fe co-doped on electronic and magnetic properties of wurtzite gallium nitride (GaN) based on the framework of density functional theory (DFT). It is found that GaN doped with Fe at Ga site is more stable than that at N-site. We calculate the electronic st...
| Publicado en: | Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences Vol. 76; no. 3; pp. 245 - 252 |
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| Autores principales: | , , , , |
| Formato: | Artículo |
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De Gruyter
Mar2021
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| Materias: | |
| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=149108599&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 149108599 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 09320784 FL07 jtl: Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences issn: 09320784 maglogo: N pubinfo: dt: Mar2021 vid: 76 iid: 3 pid: 1734 pub: De Gruyter artinfo: ui: 149108599 10.1515/zna-2020-0211 ppf: 245 ppct: 7 formats: tig: atl: Electronic and magnetic properties of Fe-doped GaN: first-principle calculations. aug: au: Abdalla, Adam S. Khan, Muhammad Sheraz Alameen, Suliman Eisa, Mohamed Hassan Aldaghri, Osamah affil: Department of Physics, Faculty of Science, University of Kordofan, El-Obeid, 51111, Sudan Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems and School of Physics, Beijing Institute of Technology, Beijing, 100081, China Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum, 11113, Sudan Department of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia su: Generative adversarial networks Magnetic properties Magnetic semiconductors Gallium nitride Density functional theory Electronic structure sug: subj: Generative adversarial networks Magnetic properties Magnetic semiconductors Gallium nitride Density functional theory Electronic structure keyword: dilute magnetic semiconductors electronic and magnetic properties spintronic ab: We have systematically studied the effect of Fe co-doped on electronic and magnetic properties of wurtzite gallium nitride (GaN) based on the framework of density functional theory (DFT). It is found that GaN doped with Fe at Ga site is more stable than that at N-site. We calculate the electronic structure of pure and single Fe doped GaN within GGA and GGA + U method and find that Fe doped GaN is a magnetic semiconductor with the total magnetization of 5μ. The magnetic coupling between Fe spins in Fe-doped GaN is an antiferromagnetic (AFM) under the super-exchange mechanism. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2021 holdings: @attributes: islocal: N |
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