| Sumario: | STT-MRAM is a kind of magnetic memory based on spin-transfer torque with advantages such as non-volatility, fast access, etc. This article first gives a general introduction to its background, followed by the principle structure of its basic cell, and introduces some recent advances after 2017 (especially about perpendicular magnetic anisotropy). It is divided into three areas: (1) the properties of the material itself, with more in-depth use of material properties (2) structural optimization (3) improvements in regulation. Finally, the paper briefly mentions the latest technologies in industry and gives a certain outlook, that STTMRAM has great advantages in combating harsh environments due to its non-volatile nature, and can be used in a wide range of military and aerospace applications.
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