The Influence of Hydrogenation and Oxygen Vacancies on Molybdenum Oxides Work Function and Gap States for Application in Organic Optoelectronics.

Molybdenum oxide is used as a low-resistance anode interfacial layer in applications such as organic light emitting diodes and organic photovoltaics. However, little is known about the correlation between its stoichiometry and electronic properties, such as work function and occupied gap states. In...

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Publicado en:Journal of the American Chemical Society Vol. 134; no. 39; pp. 16178 - 16188
Autores principales: Vasilopoulou, Maria, Douvas, Antonios M., Georgiadou, Dimitra G., Palilis, Leonidas C., Kennou, Stella, Sygellou, Labrini, Soultati, Anastasia, Kostis, Ioannis, Papadimitropoulos, Giorgos, Davazoglou, Dimitris, Argitis, Panagiotis
Formato: Artículo
Publicado: American Chemical Society 10/3/2012
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Acceso en línea:Ver este registro en EBSCOhost
fields @attributes:
  recordID: 1
pdfLink:
plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=82330784&site=ehost-live
header:
  @attributes:
    shortDbName: hlh
    uiTerm: 82330784
    longDbName: Humanities International Complete
    uiTag: AN
  controlInfo:
    bkinfo:
    jinfo:
      jid:
        00027863
        ACS
      jtl: Journal of the American Chemical Society
      issn: 00027863
      maglogo: N
    pubinfo:
      dt: 10/3/2012
      vid: 134
      iid: 39
      pid: 997
      pub: American Chemical Society
    artinfo:
      ui:
        82330784
        10.1021/ja3026906
      ppf: 16178
      ppct: 10
      formats:
      tig:
        atl: The Influence of Hydrogenation and Oxygen Vacancies on Molybdenum Oxides Work Function and Gap States for Application in Organic Optoelectronics.
      aug:
        au:
          Vasilopoulou, Maria
          Douvas, Antonios M.
          Georgiadou, Dimitra G.
          Palilis, Leonidas C.
          Kennou, Stella
          Sygellou, Labrini
          Soultati, Anastasia
          Kostis, Ioannis
          Papadimitropoulos, Giorgos
          Davazoglou, Dimitris
          Argitis, Panagiotis
        affil:
          Institute of Microelectronics, NCSR Demokritos, Terma Patriarchou Grigoriou, 15310 Aghia Paraskevi, Greece
          Department of Physics, University of Patras, 26500 Patras, Greece
          Department of Chemical Engineering, University of Patras, 26500 Patras, Greece
          Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece
      su:
        Molybdenum oxides
        Hydrogenation
        Stoichiometry
        Electron work function
        Electronic structure
        Optoelectronics
      sug:
        subj:
          Molybdenum oxides
          Hydrogenation
          Stoichiometry
          Electron work function
          Electronic structure
          Optoelectronics
      ab: Molybdenum oxide is used as a low-resistance anode interfacial layer in applications such as organic light emitting diodes and organic photovoltaics. However, little is known about the correlation between its stoichiometry and electronic properties, such as work function and occupied gap states. In addition, despite the fact that the knowledge of the exact oxide stoichiometry is of paramount importance, few studies have appeared in the literature discussing how this stoichiometry can be controlled to permit the desirable modification of the oxide's electronic structure. This work aims to investigate the beneficial role of hydrogenation (the incorporation of hydrogen within the oxide lattice) versus oxygen vacancy formation in tuning the electronic structure of molybdenum oxides while maintaining their high work function. A large improvement in the operational characteristics of both polymer light emitting devices and bulk heterojunction solar cells incorporating hydrogenated Mo oxides as hole injection/extraction layers was achieved as a result of favorable energy level alignment at the metal oxide/organic interface and enhanced charge transport through the formation of a large density of gap states near the Fermi level.
      pubtype: Academic Journal
      doctype: Article
      src: R
    language: English
    refInfo:
    copyright:
      @attributes:
        flag: Y
      dt:
        @attributes:
          year: 2012
    holdings:
      @attributes:
        islocal: N