Polarity-Reversed Robust Carrier Mobility in Monoiayer MoS Nanoribbons.

Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer M0S sheet and nanoribbons. In contrast to the dramatic deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS nanoribbons is compa...

Descripción completa

Detalles Bibliográficos
Publicado en:Journal of the American Chemical Society Vol. 136; no. 17; pp. 6269 - 6276
Autores principales: Yongqing Cai, Gang Zhang, Yong-Wei Zhang
Formato: Artículo
Publicado: American Chemical Society 4/30/2014
Materias:
Acceso en línea:Ver este registro en EBSCOhost
fields @attributes:
  recordID: 1
pdfLink:
plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=96162584&site=ehost-live
header:
  @attributes:
    shortDbName: hlh
    uiTerm: 96162584
    longDbName: Humanities International Complete
    uiTag: AN
  controlInfo:
    bkinfo:
    jinfo:
      jid:
        00027863
        ACS
      jtl: Journal of the American Chemical Society
      issn: 00027863
      maglogo: N
    pubinfo:
      dt: 4/30/2014
      vid: 136
      iid: 17
      pid: 997
      pub: American Chemical Society
    artinfo:
      ui:
        96162584
        10.1021/ja4109787
      ppf: 6269
      ppct: 7
      formats:
      tig:
        atl: Polarity-Reversed Robust Carrier Mobility in Monoiayer MoS Nanoribbons.
      aug:
        au:
          Yongqing Cai
          Gang Zhang
          Yong-Wei Zhang
        affil: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632
      su:
        Charge carrier mobility
        Molybdenum disulfide
        Electric properties of monomolecular films
        Nanoribbons
        Electron transport
      sug:
        subj:
          Charge carrier mobility
          Molybdenum disulfide
          Electric properties of monomolecular films
          Nanoribbons
          Electron transport
      ab: Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer M0S sheet and nanoribbons. In contrast to the dramatic deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS nanoribbons is comparable to its sheet counterpart, albeit oscillating with ribbon width. Surprisingly, a room-temperature transport polarity reversal is observed with μ of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm V s in sheet, and 49.72 (h) and 190.89 (e) cm V s in 4 nm Graphene nanoribbon. The high and robust μ and its polarity reversal are attributable to the different characteristics of edge states inherent in MoS nanoribbons. Our study suggests that width reduction together with edge engineering provide a promising route for improving the transport properties of MoS nanostructures.
      pubtype: Academic Journal
      doctype: Article
      src: R
    language: English
    refInfo:
    copyright:
      @attributes:
        flag: Y
      dt:
        @attributes:
          year: 2014
    holdings:
      @attributes:
        islocal: N