Polarity-Reversed Robust Carrier Mobility in Monoiayer MoS Nanoribbons.
Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer M0S sheet and nanoribbons. In contrast to the dramatic deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS nanoribbons is compa...
| Publicado en: | Journal of the American Chemical Society Vol. 136; no. 17; pp. 6269 - 6276 |
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| Autores principales: | , , |
| Formato: | Artículo |
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American Chemical Society
4/30/2014
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=96162584&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 96162584 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00027863 ACS jtl: Journal of the American Chemical Society issn: 00027863 maglogo: N pubinfo: dt: 4/30/2014 vid: 136 iid: 17 pid: 997 pub: American Chemical Society artinfo: ui: 96162584 10.1021/ja4109787 ppf: 6269 ppct: 7 formats: tig: atl: Polarity-Reversed Robust Carrier Mobility in Monoiayer MoS Nanoribbons. aug: au: Yongqing Cai Gang Zhang Yong-Wei Zhang affil: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 su: Charge carrier mobility Molybdenum disulfide Electric properties of monomolecular films Nanoribbons Electron transport sug: subj: Charge carrier mobility Molybdenum disulfide Electric properties of monomolecular films Nanoribbons Electron transport ab: Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer M0S sheet and nanoribbons. In contrast to the dramatic deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS nanoribbons is comparable to its sheet counterpart, albeit oscillating with ribbon width. Surprisingly, a room-temperature transport polarity reversal is observed with μ of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm V s in sheet, and 49.72 (h) and 190.89 (e) cm V s in 4 nm Graphene nanoribbon. The high and robust μ and its polarity reversal are attributable to the different characteristics of edge states inherent in MoS nanoribbons. Our study suggests that width reduction together with edge engineering provide a promising route for improving the transport properties of MoS nanostructures. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2014 holdings: @attributes: islocal: N |
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