Narrow Bandgap in β-BaZnAs and Its Chemical Origins.

β-BaZnAs is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that β-BaZnAs and LaZnAsO have similar bandgaps; however, the bandgap of β-BaZnAs (previously reported value ~0.2 eV) is 1 order of magnitude smaller than that of...

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Publicado en:	Journal of the American Chemical Society Vol. 136; no. 42; pp. 14959 - 14966
Autores principales:	Zewen Xiao, Hidenori Hiramatsu, Shigenori Ueda, Yoshitake Toda, Fan-Yong Ran, Jiangang Guo, Hechang Lei, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya
Formato:	Artículo
Publicado:	American Chemical Society 10/22/2014
Materias:	Band gaps Crystal structure research Photoelectron spectroscopy Electric conductivity research Density functionals Valence bands
Acceso en línea:	Ver este registro en EBSCOhost