IMPATT Diodes Based on <111>, <100>, and <110> Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows.
The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on <111>, <100>, and <110> oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S per...
| Publicado en: | International Scholarly Research Notices pp. 1 - 12 |
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| Autores principales: | , , , , , |
| Formato: | equations & formulas research tables/charts Journal Article |
| Publicado: |
Wiley-Blackwell
2015
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=ccm&AN=125673811&site=ehost-live header: @attributes: shortDbName: ccm uiTerm: 125673811 longDbName: CINAHL Complete uiTag: AN controlInfo: bkinfo: dissinfo: jinfo: jid: 23567872 JWZI jtl: International Scholarly Research Notices issn: 23567872 maglogo: N pubinfo: dt: 2015 pid: 480 pub: Wiley-Blackwell place: Malden, Massachusetts artinfo: ui: 125673811 125673811 125673811 10.1155/2015/484768 125673811 ppf: 1 ppct: 11 formats: fmt: @attributes: type: P tig: atl: IMPATT Diodes Based on <111>, <100>, and <110> Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows. aug: au: Banerjee, Bhadrani Tripathi, Anvita Das, Adrija Singh, Kumari Alka Acharyya, Aritra Banerjee, J. P. affil: Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly,West Bengal 712139, India sug: subj: Gallium Arsenic Electronics Simulations ab: The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on <111>, <100>, and <110> oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220GHz. Results show that ?111? oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94GHz; however, the L-S performance of <110> oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies. pubtype: Academic Journal doctype: equations & formulas research tables/charts Journal Article ougenre: Article language: English refInfo: holdings: @attributes: islocal: N |
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