IMPATT Diodes Based on <111>, <100>, and <110> Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows.

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on <111>, <100>, and <110> oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S per...

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Publicado en:	International Scholarly Research Notices pp. 1 - 12
Autores principales:	Banerjee, Bhadrani, Tripathi, Anvita, Das, Adrija, Singh, Kumari Alka, Acharyya, Aritra, Banerjee, J. P.
Formato:	equations & formulas research tables/charts Journal Article
Publicado:	Wiley-Blackwell 2015
Acceso en línea:	Ver este registro en EBSCOhost