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N-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube.

We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in det...

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Published in:Journal of the American Chemical Society Vol. 127; no. 24; pp. 8614 - 8618
Main Authors: Kai Xiao, Yunqi Liu, Ping'an Hu, Gui Yu, Yanming Sun, Daoben Zhu
Format: Article
Published: American Chemical Society 6/22/2005
Subjects:
Field-effect transistors
Transistors
Electric resistors
Direct energy conversion
Electron work function
Electron emission
Online Access:View this record in EBSCOhost
Summary:We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.