N-Type Field-Effect Transistors Made of an Individual Nitrogen-Doped Multiwalled Carbon Nanotube.

We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in det...

Descripción completa

Detalles Bibliográficos
Publicado en:	Journal of the American Chemical Society Vol. 127; no. 24; pp. 8614 - 8618
Autores principales:	Kai Xiao, Yunqi Liu, Ping'an Hu, Gui Yu, Yanming Sun, Daoben Zhu
Formato:	Artículo
Publicado:	American Chemical Society 6/22/2005
Materias:	Field-effect transistors Transistors Electric resistors Direct energy conversion Electron work function Electron emission
Acceso en línea:	Ver este registro en EBSCOhost

Descripción
Sumario:	We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.