High-Performance Air-Stable n-Type Transistors with an Asymmetrical Device Configuration Based on Organic Single-Crystalline Submicrometer/Nanometer Ribbons.
High-performance air-stable n-type field-effect transistors based on single-crystalline submicro- and nanometer ribbons of copper hexadecafluorophthalocyanine (FCuPc) were studied by using a novel device configuration. These submicro- and nanometer ribbons were synthesized by a physical vapor transp...
| Publicado en: | Journal of the American Chemical Society Vol. 128; no. 45; pp. 14634 - 14640 |
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| Autores principales: | , , , |
| Formato: | Artículo |
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American Chemical Society
11/15/2006
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=23249093&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 23249093 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00027863 ACS jtl: Journal of the American Chemical Society issn: 00027863 maglogo: N pubinfo: dt: 11/15/2006 vid: 128 iid: 45 pid: 997 pub: American Chemical Society artinfo: ui: 23249093 10.1021/ja064476f ppf: 14634 ppct: 6 formats: tig: atl: High-Performance Air-Stable n-Type Transistors with an Asymmetrical Device Configuration Based on Organic Single-Crystalline Submicrometer/Nanometer Ribbons. aug: au: Qingxin Tang Hongxiang Li Yaling Liu Wenping Hu affil: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080 Graduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of China su: Semiconductors Nanostructured materials Field-effect transistors Electron diffraction Physical vapor deposition X-ray diffraction sug: subj: Semiconductors Nanostructured materials Field-effect transistors Electron diffraction Physical vapor deposition X-ray diffraction ab: High-performance air-stable n-type field-effect transistors based on single-crystalline submicro- and nanometer ribbons of copper hexadecafluorophthalocyanine (FCuPc) were studied by using a novel device configuration. These submicro- and nanometer ribbons were synthesized by a physical vapor transport technique and characterized by the powder X-ray diffraction pattern and selected area electron diffraction pattern of transmission electron microscopy. They were found to crystallize in a structure different from that of copper phthalocyanine. These single-crystalline submicro- and nanometer ribbons could be in situ grown along the surface of Si/SiO substrates during synthesis. The intimate contact between the crystal and the insulator surface generated by the ‘in situ growing process’ was free from the general disadvantages of the handpicking process for the fabrication of organic single-crystal devices. High performance was observed in devices with an asymmetrical drain/source (Au/Ag) electrode configuration because in such devices a stepwise energy level between the electrodes and the lowest unoccupied molecular orbital of FCuPc was built, which was beneficial to electron injection and transport. The field-effect mobility of such devices was calculated to be ∼0.2 cm² V s with the on/off ratio at ∼6 × 10. The performances of the transistors were air stable and highly reproducible. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2006 holdings: @attributes: islocal: N |
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