High-Performance Air-Stable n-Type Transistors with an Asymmetrical Device Configuration Based on Organic Single-Crystalline Submicrometer/Nanometer Ribbons.

High-performance air-stable n-type field-effect transistors based on single-crystalline submicro- and nanometer ribbons of copper hexadecafluorophthalocyanine (FCuPc) were studied by using a novel device configuration. These submicro- and nanometer ribbons were synthesized by a physical vapor transp...

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Publicado en:	Journal of the American Chemical Society Vol. 128; no. 45; pp. 14634 - 14640
Autores principales:	Qingxin Tang, Hongxiang Li, Yaling Liu, Wenping Hu
Formato:	Artículo
Publicado:	American Chemical Society 11/15/2006
Materias:	Semiconductors Nanostructured materials Field-effect transistors Electron diffraction Physical vapor deposition X-ray diffraction
Acceso en línea:	Ver este registro en EBSCOhost