New Technique Could Increase Chip Performance.
The article discusses a lithography technique under development at the Massachusetts Institute of Technology (MIT) that holds promise for creating grids of parallel lines on computer chips that are only 25 nanometers wide. Scanning-beam interference lithography (SBIL), developed by researchers under...
| Publicado en: | Computer (00189162) Vol. 42; no. 3; pp. 21 - 23 |
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| Formato: | Artículo |
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IEEE
Mar2009
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=36948223&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 36948223 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00189162 PUT jtl: Computer (00189162) issn: 00189162 maglogo: N pubinfo: dt: Mar2009 vid: 42 iid: 3 pid: 13605 pub: IEEE artinfo: ui: 36948223 ppf: 21 ppct: 2 formats: tig: atl: New Technique Could Increase Chip Performance. aug: au: Paulson, Linda Dailey su: Integrated circuits Microprocessors Personal computers Massachusetts Institute of Technology Schattenburg, Mark Heilmann, Ralf sug: subj: Integrated circuits Microprocessors Personal computers Massachusetts Institute of Technology Schattenburg, Mark Heilmann, Ralf ab: The article discusses a lithography technique under development at the Massachusetts Institute of Technology (MIT) that holds promise for creating grids of parallel lines on computer chips that are only 25 nanometers wide. Scanning-beam interference lithography (SBIL), developed by researchers under Mark Schattenburg, is being implemented by another research team headed by Ralf Heilmann to generate the 25-nanometer patterns. By comparison, most chips use 65-nanometer patterns, with 45-nanometer designs just having begun to appear commercially in volume. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2009 holdings: @attributes: islocal: N |
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