Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RESbO and RESb-δO, with RE = La, Sm, Gd, and Ho.

In the search for high-temperature thermoelectric materials, two families of novel, narrow-band-gap semiconducting antimonide oxides with the compositions RESbO and RESb-δO (RE = La, Sm, Gd, Ho) have been discovered. Their synthesis was motivated by attempts to open a band gap in the semimetallic RE...

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Publicado en:Journal of the American Chemical Society Vol. 132; no. 25; pp. 8795 - 8804
Autores principales: Peng Wang, Forbes, Scott, Kolodiazhnyi, Taras, Kosuda, Kosuke, Mozharivskyj, Yurij
Formato: Artículo
Publicado: American Chemical Society 6/30/2010
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Acceso en línea:Ver este registro en EBSCOhost