Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RESbO and RESb-δO, with RE = La, Sm, Gd, and Ho.
In the search for high-temperature thermoelectric materials, two families of novel, narrow-band-gap semiconducting antimonide oxides with the compositions RESbO and RESb-δO (RE = La, Sm, Gd, Ho) have been discovered. Their synthesis was motivated by attempts to open a band gap in the semimetallic RE...
| Publicado en: | Journal of the American Chemical Society Vol. 132; no. 25; pp. 8795 - 8804 |
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| Autores principales: | , , , , |
| Formato: | Artículo |
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American Chemical Society
6/30/2010
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=52271149&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 52271149 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00027863 ACS jtl: Journal of the American Chemical Society issn: 00027863 maglogo: N pubinfo: dt: 6/30/2010 vid: 132 iid: 25 pid: 997 pub: American Chemical Society artinfo: ui: 52271149 10.1021/ja1027698 ppf: 8795 ppct: 9 formats: tig: atl: Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RESbO and RESb-δO, with RE = La, Sm, Gd, and Ho. aug: au: Peng Wang Forbes, Scott Kolodiazhnyi, Taras Kosuda, Kosuke Mozharivskyj, Yurij affil: Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4MI, Canada New Materials Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan Materials Analysis Station, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan su: Rhenium compounds Thermoelectric materials Electronic structure Structural frames Free electron theory of metals Semiconductors sug: subj: Rhenium compounds Thermoelectric materials Electronic structure Structural frames Free electron theory of metals Semiconductors ab: In the search for high-temperature thermoelectric materials, two families of novel, narrow-band-gap semiconducting antimonide oxides with the compositions RESbO and RESb-δO (RE = La, Sm, Gd, Ho) have been discovered. Their synthesis was motivated by attempts to open a band gap in the semimetallic RESb binaries through a chemical fusion of RESb and corresponding insulating REO. Temperatures of 1350 °C or higher are required to obtain these phases. Both RESbO and RESb-δO adopt new monoclinic structures with the C2/m space group and feature similar REO frameworks composed of "REO" tetrahedral units. In both structures, the Sb atoms occupy the empty channels within the REO sublattice. High-purity bulk Sm and Ho samples were prepared and subjected to electrical resistivity measurements. Both the RESbO and RESb-δO (RE = Sm, Ho) phases exhibit a semiconductor-type electrical behavior. While a small band gap in RESbO results from the separation of the valence and conduction bands, a band gap in RESb-δO appears to result from the Anderson localization of electrons. The relationship among the composition, crystal structures, and electrical resistivity is analyzed using electronic structure calculations. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2010 holdings: @attributes: islocal: N |
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