Disparate Effects of Cu and V on Structures of Exohedral Transition Metal-Doped Silicon Clusters: A Combined Far-Infrared Spectroscopic and Computational Study.

The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bar...

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Publicado en:Journal of the American Chemical Society Vol. 132; no. 44; pp. 15589 - 15603
Autores principales: Ngan, Vu Thi, Gruene, Philipp, Claes, Pieterjan, Janssens, Ewald, Fielicke, André, Nguyen, Minh Tho, Lievens, Peter
Formato: Artículo
Publicado: American Chemical Society 11/10/2010
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Acceso en línea:Ver este registro en EBSCOhost
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      dt: 11/10/2010
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      pub: American Chemical Society
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        10.1021/ja105099u
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        atl: Disparate Effects of Cu and V on Structures of Exohedral Transition Metal-Doped Silicon Clusters: A Combined Far-Infrared Spectroscopic and Computational Study.
      aug:
        au:
          Ngan, Vu Thi
          Gruene, Philipp
          Claes, Pieterjan
          Janssens, Ewald
          Fielicke, André
          Nguyen, Minh Tho
          Lievens, Peter
        affil:
          Department of Chemistry, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
          Institute for Nanoscale Physics and Chemistry (INPAC), Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
          Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
          Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
      su:
        Transition metals
        Silicon spectra
        Spectroscopic imaging
        Density functionals
        Infrared spectra
      sug:
        subj:
          Transition metals
          Silicon spectra
          Spectroscopic imaging
          Density functionals
          Infrared spectra
      ab: The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bare silicon clusters, Cu favors adsorption to the neutral or cationic bare clusters in a lower coordination site. The different behavior of the two transition metals becomes evident in the structures of SiM (n = 4-11 for M = V, and n = 6-11 for M = Cu), which are investigated by density functional theory and, for several sizes, confirmed by comparison with their experimental vibrational spectra. The spectra are measured on the corresponding SiM·Ar complexes, which can be formed for the exohedrally doped silicon clusters. The comparison between experimental and calculated spectra indicates that the BP86 functional is suitable to predict far-infrared spectra of these clusters. In most cases, the calculated infrared spectrum of the lowest-lying isomer fits well with the experiment, even when various isomers and different electronic states are close in energy. However, in a few cases, namely SiCu, SiCu, and SiV, the experimentally verified isomers are not the lowest in energy according to the density functional theory calculations, but their structures still follow the described growth mechanism. The different growth patterns of the two series of doped Si clusters reflect the role of the transition metal's 3d orbitals in the binding of the dopant atoms.
      pubtype: Academic Journal
      doctype: Article
      src: R
    language: English
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          year: 2010
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