Disparate Effects of Cu and V on Structures of Exohedral Transition Metal-Doped Silicon Clusters: A Combined Far-Infrared Spectroscopic and Computational Study.

The growth mechanisms of small cationic silicon clusters containing up to 11 Si atoms, exohedrally doped by V and Cu atoms, are described. We find that as dopants, V and Cu follow two different paths: while V prefers substitution of a silicon atom in a highly coordinated position of the cationic bar...

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Publicado en:	Journal of the American Chemical Society Vol. 132; no. 44; pp. 15589 - 15603
Autores principales:	Ngan, Vu Thi, Gruene, Philipp, Claes, Pieterjan, Janssens, Ewald, Fielicke, André, Nguyen, Minh Tho, Lievens, Peter
Formato:	Artículo
Publicado:	American Chemical Society 11/10/2010
Materias:	Transition metals Silicon spectra Spectroscopic imaging Density functionals Infrared spectra
Acceso en línea:	Ver este registro en EBSCOhost