Device Characterization and Modeling of Large-size GaN HEMTs
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equa...
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Kassel University Press GmbH_Legacy
2012
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=753839&site=ehost-live header: @attributes: shortDbName: nlebk uiTerm: 753839 longDbName: eBook Collection (EBSCOhost) uiTag: AN controlInfo: bkinfo: btl: Device Characterization and Modeling of Large-size GaN HEMTs aug: au: Flores, Jaime Alberto Zamudio isbn: 9783862193646 9783862193653 imageinfo: pubinfo: dt: @attributes: year: 2012 month: 01 day: 01 dtAvail: @attributes: year: 2014 month: 04 day: 08 pub: Kassel University Press GmbH_Legacy pubContract: Kassel University Press GmbH place: Kassel price: 0.01 limitsGroup: maxCheckoutDays: 1500 pda: N printPagesOffline: 100 printPagesOnline: 100 previewPages: 10000 prePubGroup: dewey: @attributes: class: 621.3815284 item: 621 .3815284 lc: @attributes: class: TK7871.95 .F56 2012eb item: TK 7871 .95 .F56 2012eb artinfo: ui: 753839 859157541 formats: fmt: @attributes: type: EB doid: NL$753839$PDF caption: PDF download: Y tig: atl: Device Characterization and Modeling of Large-size GaN HEMTs ptl: Device Characterization and Modeling of Large-size GaN HEMTs aug: au: Flores, Jaime Alberto Zamudio su: Modulation-doped field-effect transistors Gallium nitride Wide gap semiconductors sug: subj: TECHNOLOGY & ENGINEERING / Mechanical Modulation-doped field-effect transistors Gallium nitride Wide gap semiconductors ab: This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equations, employed to form capacitance ratios. Basic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. The extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. All IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character. pubtype: eBook doctype: Book ougenre: Book language: English copyright: @attributes: flag: N copyrightText: holdings: @attributes: islocal: N |
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