Device Characterization and Modeling of Large-size GaN HEMTs
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equa...
| Autor principal: | |
|---|---|
| Formato: | Libro |
| Publicado: |
Kassel University Press GmbH_Legacy
2012
|
| Materias: | |
| Acceso en línea: | Ver este registro en EBSCOhost |