Device Characterization and Modeling of Large-size GaN HEMTs

This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equa...

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Bibliographic Details

Main Author:	Flores, Jaime Alberto Zamudio
Format:	Book
Published:	Kassel University Press GmbH_Legacy 2012
Subjects:	Modulation-doped field-effect transistors Gallium nitride Wide gap semiconductors
Online Access:	View this record in EBSCOhost