Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride.

Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics require high-quality monolayers as the ultrathin dielectric. Here, the nucleation and growth of h-BN monolayer on Ru(0001) surface are investigated using scanning tunneling microscopy with a view toward un...

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Publicado en:	Journal of the American Chemical Society Vol. 135; no. 6; pp. 2368 - 2374
Autores principales:	Jiong Lu, Pei Shan Emmeline Yeo, Yi Zheng, Hai Xu, Chee Kwan Gan, Sullivan, Michael B., Neto, A. H. Castro, Kian Ping Loh
Formato:	Artículo
Publicado:	American Chemical Society 2/13/2013
Materias:	Monomolecular film synthesis Boron nitride Nanoelectronics Chemistry methodology Chemical synthesis Graphene
Acceso en línea:	Ver este registro en EBSCOhost