Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride.
Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics require high-quality monolayers as the ultrathin dielectric. Here, the nucleation and growth of h-BN monolayer on Ru(0001) surface are investigated using scanning tunneling microscopy with a view toward un...
| Publicado en: | Journal of the American Chemical Society Vol. 135; no. 6; pp. 2368 - 2374 |
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| Autores principales: | , , , , , , , |
| Formato: | Artículo |
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American Chemical Society
2/13/2013
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| Materias: | |
| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=86063913&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 86063913 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00027863 ACS jtl: Journal of the American Chemical Society issn: 00027863 maglogo: N pubinfo: dt: 2/13/2013 vid: 135 iid: 6 pid: 997 pub: American Chemical Society artinfo: ui: 86063913 10.1021/ja3117735 ppf: 2368 ppct: 6 formats: tig: atl: Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride. aug: au: Jiong Lu Pei Shan Emmeline Yeo Yi Zheng Hai Xu Chee Kwan Gan Sullivan, Michael B. Neto, A. H. Castro Kian Ping Loh affil: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546 Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 su: Monomolecular film synthesis Boron nitride Nanoelectronics Chemistry methodology Chemical synthesis Graphene sug: subj: Monomolecular film synthesis Boron nitride Nanoelectronics Chemistry methodology Chemical synthesis Graphene ab: Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics require high-quality monolayers as the ultrathin dielectric. Here, the nucleation and growth of h-BN monolayer on Ru(0001) surface are investigated using scanning tunneling microscopy with a view toward understanding the process of defect formation on a strongly interacted interface. In contrast to homoelemental bonding in graphene, the heteroelemental nature of h-BN gives rise to growth fronts with elemental polarity. This can have consequences in the different stages of film growth, from the nucleation of h-BN magic clusters and their sintering to form compact triangular islands to the growth of patchwork mosaic monolayer with a high density of misfit boundaries. The parallel alignment of triangular islands on the same terrace produces translational fault lines when growth fronts merge, while antiparallel alignment of islands on adjacent terraces produces non-bonded fault lines between domains terminated by like atoms. With these insights into the generation of void defects and fault lines at grain boundaries, we demonstrate a strategy to obtain high-quality h-BN monolayer film based on step flow growth. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2013 holdings: @attributes: islocal: N |
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