Carrier Generation in Multicomponent Wide-Bandgap Oxides: InGaZnO.

To exploit the full potential of multicomponent wide-bandgap oxides, an in-depth understanding of the complex defect chemistry and of the role played by the constituent oxides is required. In this work, thorough theoretical and experimental investigations are combined in order to explain the carrier...

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Publicado en:	Journal of the American Chemical Society Vol. 135; no. 15; pp. 5685 - 5693
Autores principales:	Murat, Altynbek, Adler, Alexander U., Mason, Thomas O., Medvedeva, Julia E.
Formato:	Artículo
Publicado:	American Chemical Society 4/17/2013
Materias:	Indium gallium zinc oxide Charge carriers Density functionals Wide gap semiconductors Crystal defects Electron density Electron donor-acceptor complexes Vacancies in crystals
Acceso en línea:	Ver este registro en EBSCOhost