Carrier Generation in Multicomponent Wide-Bandgap Oxides: InGaZnO.
To exploit the full potential of multicomponent wide-bandgap oxides, an in-depth understanding of the complex defect chemistry and of the role played by the constituent oxides is required. In this work, thorough theoretical and experimental investigations are combined in order to explain the carrier...
| Publicado en: | Journal of the American Chemical Society Vol. 135; no. 15; pp. 5685 - 5693 |
|---|---|
| Autores principales: | , , , |
| Formato: | Artículo |
| Publicado: |
American Chemical Society
4/17/2013
|
| Materias: | |
| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=87561964&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 87561964 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 00027863 ACS jtl: Journal of the American Chemical Society issn: 00027863 maglogo: N pubinfo: dt: 4/17/2013 vid: 135 iid: 15 pid: 997 pub: American Chemical Society artinfo: ui: 87561964 10.1021/ja311955g ppf: 5685 ppct: 8 formats: tig: atl: Carrier Generation in Multicomponent Wide-Bandgap Oxides: InGaZnO. aug: au: Murat, Altynbek Adler, Alexander U. Mason, Thomas O. Medvedeva, Julia E. affil: Department of Physics, Missouri University of Science & Technology, Rolla, Missouri 65409, United States Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States su: Indium gallium zinc oxide Charge carriers Density functionals Wide gap semiconductors Crystal defects Electron density Electron donor-acceptor complexes Vacancies in crystals sug: subj: Indium gallium zinc oxide Charge carriers Density functionals Wide gap semiconductors Crystal defects Electron density Electron donor-acceptor complexes Vacancies in crystals ab: To exploit the full potential of multicomponent wide-bandgap oxides, an in-depth understanding of the complex defect chemistry and of the role played by the constituent oxides is required. In this work, thorough theoretical and experimental investigations are combined in order to explain the carrier generation and transport in crystalline InGaZnO. Using first-principles density functional approach, we calculate the formation energies and transition levels of possible acceptor and donor point defects as well as the implied defect complexes in InGaZnO and determine the equilibrium defect and electron densities as a function of growth temperature and oxygen partial pressure. An excellent agreement of the theoretical results with our Brouwer analysis of the bulk electrical measurements for InGaZnO establishes the Ga antisite defect, Ga, as the major electron donor in InGaZnO. Moreover, we show that the oxygen vacancies, long believed to be the carrier source in this oxide, are scarce. The proposed carrier generation mechanism also explains the observed intriguing behavior of the conductivity in In-rich vs Ga-rich InGaZnO. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2013 holdings: @attributes: islocal: N |
|---|