Artificial intelligence approach to analyze SIMS profiles of B, P and As in n- and p-type silicon substrates: experimental investigation.
In this work, we report an effective approach based on an artificial intelligence technique to investigate the secondary ions mass spectroscopy (SIMS) profiles of boron, phosphorus and arsenic ions. Those dopant ions were implanted into n- and p-type (100) Silicon substrate using the ion implantatio...
| Publicado en: | Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences Vol. 78; no. 12; pp. 1143 - 1152 |
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| Autores principales: | , , , , , , , |
| Formato: | Artículo |
| Publicado: |
De Gruyter
Dec2023
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| Materias: | |
| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=hlh&AN=173860395&site=ehost-live header: @attributes: shortDbName: hlh uiTerm: 173860395 longDbName: Humanities International Complete uiTag: AN controlInfo: bkinfo: jinfo: jid: 09320784 FL07 jtl: Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences issn: 09320784 maglogo: N pubinfo: dt: Dec2023 vid: 78 iid: 12 pid: 1734 pub: De Gruyter artinfo: ui: 173860395 10.1515/zna-2023-0200 ppf: 1143 ppct: 9 formats: tig: atl: Artificial intelligence approach to analyze SIMS profiles of B, P and As in n- and p-type silicon substrates: experimental investigation. aug: au: Filali, Walid Boubaaya, Mohamed Garoudja, Elyes Lekoui, Fouaz Abdellaoui, Ibrahime Amrani, Rachid Oussalah, Slimane Sengouga, Nouredine affil: Plateforme Technologique de Microfabrication, Centre de Développement des Technologies Avancées, cité 20 août 1956, Baba Hassen, 16081 Algiers, Algeria Division Milieux Ionisés et Laser, Centre de Développement des Technologies Avancées, cité 20 août 1956, Baba Hassen, 16081 Algiers, Algeria Département des Sciences de la Matière, Université Alger1 Ben Youcef Benkhedda, Algiers, Algeria Division Microélectronique et Nanotechnologies, Centre de Développement des Technologies Avancées, cité 20 août 1956, Baba Hassen, 16081 Algiers, Algeria Laboratory of Metallic and Semiconducting Materials (LMSM), Université Mohamed Khider Biskra, BP 145 RP, 07000 Biskra, Algeria su: Artificial intelligence Particle swarm optimization Ion implantation Mass spectrometry Silicon sug: subj: Artificial intelligence Particle swarm optimization Ion implantation Mass spectrometry Silicon keyword: artificial intelligence doping profile PSO algorithm SIMS ab: In this work, we report an effective approach based on an artificial intelligence technique to investigate the secondary ions mass spectroscopy (SIMS) profiles of boron, phosphorus and arsenic ions. Those dopant ions were implanted into n- and p-type (100) Silicon substrate using the ion implantation technique with energy of 100 and 180 keV. Annealing treatment was conducted at various temperatures ranging from 900 to 1030 °C for 30 min. The doping profile parameters such as the activation energy, diffusion coefficient, junction depth, implant dose, projected range and standard deviation were determined using particle swarm optimization (PSO) algorithm. The efficiency of this strategy was experimentally verified by the fitting between both real measured SIMS profile and predicted ones. In addition, a set of simulated doping profiles was generated for different annealing time to prove the ability of this approach to accurately estimate the above parameters even when changing the experimental conditions. pubtype: Academic Journal doctype: Article src: R language: English refInfo: copyright: @attributes: flag: Y dt: @attributes: year: 2023 holdings: @attributes: islocal: N |
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