Artificial intelligence approach to analyze SIMS profiles of B, P and As in n- and p-type silicon substrates: experimental investigation.

In this work, we report an effective approach based on an artificial intelligence technique to investigate the secondary ions mass spectroscopy (SIMS) profiles of boron, phosphorus and arsenic ions. Those dopant ions were implanted into n- and p-type (100) Silicon substrate using the ion implantatio...

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Publicado en:	Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences Vol. 78; no. 12; pp. 1143 - 1152
Autores principales:	Filali, Walid, Boubaaya, Mohamed, Garoudja, Elyes, Lekoui, Fouaz, Abdellaoui, Ibrahime, Amrani, Rachid, Oussalah, Slimane, Sengouga, Nouredine
Formato:	Artículo
Publicado:	De Gruyter Dec2023
Materias:	Artificial intelligence Particle swarm optimization Ion implantation Mass spectrometry Silicon
Acceso en línea:	Ver este registro en EBSCOhost