Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.
This study focuses on the design and simulation of a biosensor based on HEMT technology, with a focus on a GaN/AlGaN MOSHEMT architecture with a cavity and a boron-doped GaN cap layer, for identifying label-free biological molecules. The inclusion of a boron-doped GaN cap layer in the AlGaN/GaN hete...
| Publicado en: | Biomedical Microdevices Vol. 27; no. 2; pp. 1 - 19 |
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| Autores principales: | , , , , , , |
| Formato: | Journal Article |
| Publicado: |
Springer Nature
Jun2025
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| Acceso en línea: | Ver este registro en EBSCOhost |