Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications.
This study focuses on the design and simulation of a biosensor based on HEMT technology, with a focus on a GaN/AlGaN MOSHEMT architecture with a cavity and a boron-doped GaN cap layer, for identifying label-free biological molecules. The inclusion of a boron-doped GaN cap layer in the AlGaN/GaN hete...
| Publicado en: | Biomedical Microdevices Vol. 27; no. 2; pp. 1 - 19 |
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| Autores principales: | , , , , , , |
| Formato: | Journal Article |
| Publicado: |
Springer Nature
Jun2025
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| Acceso en línea: | Ver este registro en EBSCOhost |
| fields | @attributes: recordID: 1 pdfLink: plink: https://search.ebscohost.com/login.aspx?direct=true&db=ccm&AN=184915793&site=ehost-live header: @attributes: shortDbName: ccm uiTerm: 184915793 longDbName: CINAHL Complete uiTag: AN controlInfo: bkinfo: dissinfo: jinfo: jid: 13872176 ODN jtl: Biomedical Microdevices issn: 13872176 maglogo: N pubinfo: dt: Jun2025 vid: 27 iid: 2 pid: 237 pub: Springer Nature place: New York, New York artinfo: ui: 184915793 10.1007/s10544-025-00746-1 184915793 ppf: 1 ppct: 18 formats: fmt: – @attributes: type: T – @attributes: type: P tig: atl: Design and Simulation of advanced boron-doped GaN cap layer on AlGaN/GaN MOSHEMTs for enhanced label-free biosensing applications. aug: au: Hemalatha, Reddy Govindappagari Kumar, Manoharan Arun Mishra, Girish Shankar N, MohanKumar Ismail, Kamal Batcha Mohamed Mahalingam, Shanmugam Kim, Junghwan affil: Department of Electrical, Electronics and Communication Engineering, School of Technology, Gandhi Institute of Technology and Management (GITAM), 561203, Bengaluru, Karnataka, India sug: ab: This study focuses on the design and simulation of a biosensor based on HEMT technology, with a focus on a GaN/AlGaN MOSHEMT architecture with a cavity and a boron-doped GaN cap layer, for identifying label-free biological molecules. The inclusion of a boron-doped GaN cap layer in the AlGaN/GaN heterostructure facilitates E-mode operation. We examined the influence of neutral or label-free biomolecules on the electron concentration and device sensitivity. The Sentaurus TCAD device simulation tool was used to analyze the MOSHEMT structure. Our findings suggest that low dielectric biomolecules increase the drain current, whereas higher dielectric values decrease the drain current. We also evaluated the device performance across various cavity lengths (100 nm, 200 nm, 300 nm, and 400 nm). The AlGaN/GaN MOSHEMT provides excellent sensitivity and precision in biological detection. The proposed GaN cap layer MOSHEMT biosensor is designed to detect biomolecules such as Keratin, Zein, ChOx, Biotin, Streptavidin, and Urease. The addition of these biomolecules to the nanocavity significantly enhances the drain current, transconductance (gm), output conductance (gd), and sensitivity. The device demonstrates high sensitivity (~ 73%) under optimized parameters, making it suitable for precise label-free biosensing applications. pubtype: Academic Journal doctype: Journal Article ougenre: Article language: English refInfo: holdings: @attributes: islocal: N |
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