New Technique Could Increase Chip Performance.

The article discusses a lithography technique under development at the Massachusetts Institute of Technology (MIT) that holds promise for creating grids of parallel lines on computer chips that are only 25 nanometers wide. Scanning-beam interference lithography (SBIL), developed by researchers under...

Descripción completa

Detalles Bibliográficos
Publicado en:Computer (00189162) Vol. 42; no. 3; pp. 21 - 23
Autor principal: Paulson, Linda Dailey
Formato: Artículo
Publicado: IEEE Mar2009
Materias:
Acceso en línea:Ver este registro en EBSCOhost
Descripción
Sumario:The article discusses a lithography technique under development at the Massachusetts Institute of Technology (MIT) that holds promise for creating grids of parallel lines on computer chips that are only 25 nanometers wide. Scanning-beam interference lithography (SBIL), developed by researchers under Mark Schattenburg, is being implemented by another research team headed by Ralf Heilmann to generate the 25-nanometer patterns. By comparison, most chips use 65-nanometer patterns, with 45-nanometer designs just having begun to appear commercially in volume.