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Dependencia térmica de la corriente umbral en láseres semiconductores a pozo cuántico.

Results on the temperature dependence of the threshold current density for semiconductor lasers based in different materials are presented, emphasizing in GaInNAs devices. In this case the model considers, the radiative, mono-molecular and Auger recombination components. The monomolecular recombinat...

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Published in:Revista Cubana de Física Vol. 26; no. 1; pp. 83 - 89
Main Authors: Sánchez, M., Rojas, N. Suárez, Martin, J. A., Mon, Elis
Format: Article
Published: Universidad de La Habana 2009
Subjects:
Semiconductor lasers
Recombination in semiconductors
Auger effect
Simulation methods & models
Mathematical models
Online Access:View this record in EBSCOhost